TY - JOUR
T1 - Thin Epitaxial Silicon Foils Using Porous-Silicon-Based Lift-Off for Photovoltaic Application
AU - Bearda, Twan
AU - Gordon, Ivan
AU - Sivaramakrishnan Radhakrishnan, Hariharsudan
AU - Depauw, Valérie
AU - Van Nieuwenhuysen, Kris
AU - Xu, Menglei
AU - Tous, Loic
AU - Filipič, Miha
AU - Jonnak, Shashi Kiran
AU - Hajijafarassar, Alireza
AU - Liu, Xingyu
AU - Debucquoy, Maarten
AU - Abdulraheem, Yaser
AU - Szlufcik, Jozef
AU - Poortmans, Jef
N1 - Publisher Copyright:
Copyright © Materials Research Society 2016.
PY - 2016
Y1 - 2016
N2 - In order to reduce the material cost for silicon solar cells, several research groups are investigating methods to minimize the silicon consumption for making monocrystalline silicon wafers. One promising approach is deposition of an epitaxial layer on porous silicon, followed by detachment of the layer. This contribution discusses improvements in the epitaxial wafer fabrication by optimization of the porosification process. The introduction of a layered porous silicon structure allows to independently improve both epitaxial layer quality and detachment yield. In this way, we have managed to obtain 100m thick silicon wafers with effective lifetimes up to 1.3ms, and 40m thick wafers with effective lifetimes up to 700s. We will also review the current status of the process development for solar cells made on thin wafers. Two approaches are presented. In the first approach, heterojunction solar cells are fabricated on freestanding epitaxial wafers of 40m thickness. In the second approach, high efficiency (21%) heterojunction back-contacted cells are fabricated on wafers that are bonded to a glass superstrate. Challenges for device processing and limitations in cell performance are discussed.
AB - In order to reduce the material cost for silicon solar cells, several research groups are investigating methods to minimize the silicon consumption for making monocrystalline silicon wafers. One promising approach is deposition of an epitaxial layer on porous silicon, followed by detachment of the layer. This contribution discusses improvements in the epitaxial wafer fabrication by optimization of the porosification process. The introduction of a layered porous silicon structure allows to independently improve both epitaxial layer quality and detachment yield. In this way, we have managed to obtain 100m thick silicon wafers with effective lifetimes up to 1.3ms, and 40m thick wafers with effective lifetimes up to 700s. We will also review the current status of the process development for solar cells made on thin wafers. Two approaches are presented. In the first approach, heterojunction solar cells are fabricated on freestanding epitaxial wafers of 40m thickness. In the second approach, high efficiency (21%) heterojunction back-contacted cells are fabricated on wafers that are bonded to a glass superstrate. Challenges for device processing and limitations in cell performance are discussed.
KW - Si
KW - crystal growth
KW - photovoltaic
UR - http://www.scopus.com/inward/record.url?scp=85014364551&partnerID=8YFLogxK
U2 - 10.1557/adv.2016.314
DO - 10.1557/adv.2016.314
M3 - Article
AN - SCOPUS:85014364551
SN - 2059-8521
VL - 1
SP - 3235
EP - 3246
JO - MRS Advances
JF - MRS Advances
IS - 48
ER -