TY - JOUR
T1 - The interplay between emitter conformality and field-effect passivation in pyramid structured silicon solar devices
AU - Razzaq, Arsalan
AU - Depauw, Valérie
AU - John, Joachim
AU - Gordon, Ivan
AU - Szlufcik, Jozef
AU - Abdulraheem, Yaser
AU - Poortmans, Jef
N1 - Publisher Copyright:
© 2020 John Wiley & Sons, Ltd.
PY - 2021/3
Y1 - 2021/3
N2 - Light management in crystalline silicon solar cells has conventionally been achieved by random micropyramid texturing but other non-conventional surface texturing methods, such as diffraction gratings, have also attracted attention with the objective of attaining near-ideal light trapping. Unlike previous investigations on the subject in which the focus was predominantly to minimize optical losses, we report on surface passivation difference between the micron and nanoscale pyramid textures. From simulations, we find that the conformality of thermally diffused emitters is impacted by downsizing the pyramid texture to the light wavelength scale, which, in turn, affects the field-effect passivation of the resulting homojunction. The investigation reveals that, for a conformal junction, the field-effect passivation is diminished due to the formation of weak electrical field zones beneath the pyramid vertices, which is usually the case when homojunction emitters are formed by thermal diffusion on micropyramid textured surfaces. In contrast, thermal diffusion in nanoscale pyramid textured surfaces typically leads to non-conformal dopant profiles, resulting in flatter junctions and yielding stronger field passivation effect by preventing the formation of these weak electrical field zones. Experimentally, enhanced field-effect passivation is indirectly observed in terms of improvement in the effective minority-carrier lifetimes when substituting the standard micropyramid texturing by nanoscale pyramid gratings. At the device level, we demonstrate that the enhancement in the field-effect passivation increases the open-circuit voltage with respect to the micropyramid texture under the conditions of comparable chemical passivation and surface-area increase.
AB - Light management in crystalline silicon solar cells has conventionally been achieved by random micropyramid texturing but other non-conventional surface texturing methods, such as diffraction gratings, have also attracted attention with the objective of attaining near-ideal light trapping. Unlike previous investigations on the subject in which the focus was predominantly to minimize optical losses, we report on surface passivation difference between the micron and nanoscale pyramid textures. From simulations, we find that the conformality of thermally diffused emitters is impacted by downsizing the pyramid texture to the light wavelength scale, which, in turn, affects the field-effect passivation of the resulting homojunction. The investigation reveals that, for a conformal junction, the field-effect passivation is diminished due to the formation of weak electrical field zones beneath the pyramid vertices, which is usually the case when homojunction emitters are formed by thermal diffusion on micropyramid textured surfaces. In contrast, thermal diffusion in nanoscale pyramid textured surfaces typically leads to non-conformal dopant profiles, resulting in flatter junctions and yielding stronger field passivation effect by preventing the formation of these weak electrical field zones. Experimentally, enhanced field-effect passivation is indirectly observed in terms of improvement in the effective minority-carrier lifetimes when substituting the standard micropyramid texturing by nanoscale pyramid gratings. At the device level, we demonstrate that the enhancement in the field-effect passivation increases the open-circuit voltage with respect to the micropyramid texture under the conditions of comparable chemical passivation and surface-area increase.
KW - field-effect passivation
KW - homojunction
KW - inverse nanopyramids
KW - nanoimprint lithography
KW - nanophotonics
UR - https://www.scopus.com/pages/publications/85096754921
U2 - 10.1002/pip.3361
DO - 10.1002/pip.3361
M3 - Article
AN - SCOPUS:85096754921
SN - 1062-7995
VL - 29
SP - 269
EP - 280
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
IS - 3
ER -