TY - GEN
T1 - Simplified rear-side patterning for silicon heterojunction IBC solar cells
T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
AU - Radhakrishnan, Hariharsudan Sivaramakrishnan
AU - Uddin, Md Gius
AU - Xu, Menglei
AU - Abdulraheem, Yaser
AU - Gordon, Ivan
AU - Szlufcik, Jozef
AU - Poortmans, Jef
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - The heterojunction interdigitated back-contact (HJ IBC) cell technology enables remarkably high cell efficiencies, but requirescomplex processing for the rear-side patterning of the interdigitated a-Si:H electron and hole hetero-contacts. Therefore, the HJ IBC process flow must be simplified into a sequence that is cost-effective and industrially-compatible. Towards this goal, a litho-free, all-dry process sequence is being developed. As part of this simplified process flow, a novel in situ dry clean process called 'nano-envelope' clean is developed to replace the wet cleaning after dry etching of a-Si:H. Surface contaminationanalysis and passivation studies prove that the developed dry clean is as effective as the standard wet clean. Since the 'nano-envelope' clean can bedone in the same PECVD tool, the sequence from dry etching to repassivation can be done fully in situ.
AB - The heterojunction interdigitated back-contact (HJ IBC) cell technology enables remarkably high cell efficiencies, but requirescomplex processing for the rear-side patterning of the interdigitated a-Si:H electron and hole hetero-contacts. Therefore, the HJ IBC process flow must be simplified into a sequence that is cost-effective and industrially-compatible. Towards this goal, a litho-free, all-dry process sequence is being developed. As part of this simplified process flow, a novel in situ dry clean process called 'nano-envelope' clean is developed to replace the wet cleaning after dry etching of a-Si:H. Surface contaminationanalysis and passivation studies prove that the developed dry clean is as effective as the standard wet clean. Since the 'nano-envelope' clean can bedone in the same PECVD tool, the sequence from dry etching to repassivation can be done fully in situ.
UR - http://www.scopus.com/inward/record.url?scp=85059880155&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2018.8548143
DO - 10.1109/PVSC.2018.8548143
M3 - Conference contribution
AN - SCOPUS:85059880155
T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
SP - 1520
EP - 1523
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 10 June 2018 through 15 June 2018
ER -
