Silicone oxidation for a-Si: H passivation of wafers bonded to glass

Stefano Nicola Granata; Twan Bearda; Guy Beaucarne; Yaser Abdulraheem; Ivan Gordon; Jef Poortmans; Robert Mertens

doi:10.1002/pssr.201409081

Silicone oxidation for a-Si: H passivation of wafers bonded to glass

Stefano Nicola Granata
, Twan Bearda
, Guy Beaucarne
, Yaser Abdulraheem
, Ivan Gordon
, Jef Poortmans
, Robert Mertens

Kuwait University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A possible scenario for wafer-based silicon photovoltaics is the processing of solar modules starting from thin silicon wafers bonded to glass. However, interactions between the adhesive used for bonding and the solar cell processing can affect the surface passivation of the bonded wafer and decrease cell performances. A method that suppresses these interactions and leads to state-of-the-art a-Si:H surface passivation is presented in this Letter. The method is based on an increase of the surface cross-linking of a silicone adhesive by means of an O₂ plasma and it is successfully tested on three different silicones.

Original language	English
Pages (from-to)	395-398
Number of pages	4
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	5
DOIs	https://doi.org/10.1002/pssr.201409081
State	Published - May 2014

Keywords

Amorphous silicon
Silicone
Solar cells
Solar modules
Surface passivation
Thin films

Funding Agency

Kuwait Foundation for the Advancement of Sciences

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pssr.201409081

Cite this

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title = "Silicone oxidation for a-Si: H passivation of wafers bonded to glass",

abstract = "A possible scenario for wafer-based silicon photovoltaics is the processing of solar modules starting from thin silicon wafers bonded to glass. However, interactions between the adhesive used for bonding and the solar cell processing can affect the surface passivation of the bonded wafer and decrease cell performances. A method that suppresses these interactions and leads to state-of-the-art a-Si:H surface passivation is presented in this Letter. The method is based on an increase of the surface cross-linking of a silicone adhesive by means of an O2 plasma and it is successfully tested on three different silicones.",

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doi = "10.1002/pssr.201409081",

language = "English",

volume = "8",

pages = "395--398",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

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TY - JOUR

T1 - Silicone oxidation for a-Si

T2 - H passivation of wafers bonded to glass

AU - Granata, Stefano Nicola

AU - Bearda, Twan

AU - Beaucarne, Guy

AU - Abdulraheem, Yaser

AU - Gordon, Ivan

AU - Poortmans, Jef

AU - Mertens, Robert

PY - 2014/5

Y1 - 2014/5

N2 - A possible scenario for wafer-based silicon photovoltaics is the processing of solar modules starting from thin silicon wafers bonded to glass. However, interactions between the adhesive used for bonding and the solar cell processing can affect the surface passivation of the bonded wafer and decrease cell performances. A method that suppresses these interactions and leads to state-of-the-art a-Si:H surface passivation is presented in this Letter. The method is based on an increase of the surface cross-linking of a silicone adhesive by means of an O2 plasma and it is successfully tested on three different silicones.

AB - A possible scenario for wafer-based silicon photovoltaics is the processing of solar modules starting from thin silicon wafers bonded to glass. However, interactions between the adhesive used for bonding and the solar cell processing can affect the surface passivation of the bonded wafer and decrease cell performances. A method that suppresses these interactions and leads to state-of-the-art a-Si:H surface passivation is presented in this Letter. The method is based on an increase of the surface cross-linking of a silicone adhesive by means of an O2 plasma and it is successfully tested on three different silicones.

KW - Amorphous silicon

KW - Silicone

KW - Solar cells

KW - Solar modules

KW - Surface passivation

KW - Thin films

UR - https://www.scopus.com/pages/publications/84900428609

U2 - 10.1002/pssr.201409081

DO - 10.1002/pssr.201409081

M3 - Article

AN - SCOPUS:84900428609

SN - 1862-6254

VL - 8

SP - 395

EP - 398

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 5

ER -

Silicone oxidation for a-Si: H passivation of wafers bonded to glass

Abstract

Keywords

Funding Agency

UN SDGs

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