TY - JOUR
T1 - Silicon heterojunction interdigitated back-contact solar cells bonded to glass with efficiency >21%
AU - Xu, Menglei
AU - Bearda, Twan
AU - Sivaramakrishnan Radhakrishnan, Hariharsudan
AU - Kiran Jonnak, Shashi
AU - Hasan, Mahmudul
AU - Malik, Shuja
AU - Filipič, Miha
AU - Depauw, Valérie
AU - Van Nieuwenhuysen, Kris
AU - Abdulraheem, Yaser
AU - Debucquoy, Maarten
AU - Gordon, Ivan
AU - Szlufcik, Jozef
AU - Poortmans, Jef
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/6/1
Y1 - 2017/6/1
N2 - Previously, IMEC proposed the i2-module concept which allows to process silicon heterojunction interdigitated back-contact (SHJ-IBC) cells on thin (<50 µm) Si wafers at module level. This concept includes the bonding of the thin wafer early on to the module cover glass, which delivers mechanical support to the wafer and thus significantly improves the production yield. In this work, we test silicone and ethylene vinyl acetate bonding agents and prove them to be resistant to all rear side processes, including wet and plasma processes. Moreover, a lift-off process using a sacrificial SiOx layer has been developed for emitter patterning to replace conventional lithography. The optimized process steps are demonstrated by the fabrication of SHJ-IBC cells on 6-inch 190 µm-thick wafers. Efficiencies up to 22.6% have been achieved on reference freestanding wafers. Excellent Voc of 734 mv and Jsc of 40.8 mA/cm2 lead to an efficiency of 21.7% on silicone-bonded cells, where the high Voc indicates the process compatibility of the bonding agent. The developments that enabled such achievements and the key factors that limit the device performance are discussed in this paper.
AB - Previously, IMEC proposed the i2-module concept which allows to process silicon heterojunction interdigitated back-contact (SHJ-IBC) cells on thin (<50 µm) Si wafers at module level. This concept includes the bonding of the thin wafer early on to the module cover glass, which delivers mechanical support to the wafer and thus significantly improves the production yield. In this work, we test silicone and ethylene vinyl acetate bonding agents and prove them to be resistant to all rear side processes, including wet and plasma processes. Moreover, a lift-off process using a sacrificial SiOx layer has been developed for emitter patterning to replace conventional lithography. The optimized process steps are demonstrated by the fabrication of SHJ-IBC cells on 6-inch 190 µm-thick wafers. Efficiencies up to 22.6% have been achieved on reference freestanding wafers. Excellent Voc of 734 mv and Jsc of 40.8 mA/cm2 lead to an efficiency of 21.7% on silicone-bonded cells, where the high Voc indicates the process compatibility of the bonding agent. The developments that enabled such achievements and the key factors that limit the device performance are discussed in this paper.
KW - Amorphous silicon
KW - Bonding
KW - Interdigitated back-contact
KW - Silicon heterojunction
KW - Solar cells
KW - Superstrate processing
UR - http://www.scopus.com/inward/record.url?scp=85014369396&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2017.02.032
DO - 10.1016/j.solmat.2017.02.032
M3 - Article
AN - SCOPUS:85014369396
SN - 0927-0248
VL - 165
SP - 82
EP - 87
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
ER -
