Influence of substrate potential on a-Si:H passivation of Si foils bonded to glass

S. N. Granata; T. Bearda; M. L. Xu; Y. Abdulraheem; I. Gordon; R. Mertens; J. Poortmans

doi:10.1016/j.tsf.2015.02.044

Influence of substrate potential on a-Si:H passivation of Si foils bonded to glass

S. N. Granata, T. Bearda, M. L. Xu, Y. Abdulraheem, I. Gordon, R. Mertens, J. Poortmans

Kuwait University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Abstract In the future solar devices will be manufactured onto thin mono-crystalline silicon wafers (foils) potentially bonded to substrate carriers. In this study, the influence of the substrate carrier potential (grounded or floating) on the amorphous silicon a-Si:H surface passivation of the bonded foil is discussed for the cases of conductive and insulating substrate carriers. A conductive carrier leads to an increase in deposition rate and ion bombardment energy, which is detrimental for sample lifetime. An insulating carrier, e.g., a glass substrate, inverts the trend and improves the a-Si:H surface passivation.

Original language	English
Article number	34124
Pages (from-to)	9-13
Number of pages	5
Journal	Thin Solid Films
Volume	579
DOIs	https://doi.org/10.1016/j.tsf.2015.02.044
State	Published - 31 Mar 2015

Keywords

Amorphous silicon
Heterojunctions
PECVD
Plasma potential
Silicon solar cells
Surface passivation
Thin wafers

Funding Agency

Kuwait Foundation for the Advancement of Sciences

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.tsf.2015.02.044

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title = "Influence of substrate potential on a-Si:H passivation of Si foils bonded to glass",

abstract = "Abstract In the future solar devices will be manufactured onto thin mono-crystalline silicon wafers (foils) potentially bonded to substrate carriers. In this study, the influence of the substrate carrier potential (grounded or floating) on the amorphous silicon a-Si:H surface passivation of the bonded foil is discussed for the cases of conductive and insulating substrate carriers. A conductive carrier leads to an increase in deposition rate and ion bombardment energy, which is detrimental for sample lifetime. An insulating carrier, e.g., a glass substrate, inverts the trend and improves the a-Si:H surface passivation.",

keywords = "Amorphous silicon, Heterojunctions, PECVD, Plasma potential, Silicon solar cells, Surface passivation, Thin wafers",

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year = "2015",

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day = "31",

doi = "10.1016/j.tsf.2015.02.044",

language = "English",

volume = "579",

pages = "9--13",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Influence of substrate potential on a-Si:H passivation of Si foils bonded to glass

AU - Granata, S. N.

AU - Bearda, T.

AU - Xu, M. L.

AU - Abdulraheem, Y.

AU - Gordon, I.

AU - Mertens, R.

AU - Poortmans, J.

PY - 2015/3/31

Y1 - 2015/3/31

N2 - Abstract In the future solar devices will be manufactured onto thin mono-crystalline silicon wafers (foils) potentially bonded to substrate carriers. In this study, the influence of the substrate carrier potential (grounded or floating) on the amorphous silicon a-Si:H surface passivation of the bonded foil is discussed for the cases of conductive and insulating substrate carriers. A conductive carrier leads to an increase in deposition rate and ion bombardment energy, which is detrimental for sample lifetime. An insulating carrier, e.g., a glass substrate, inverts the trend and improves the a-Si:H surface passivation.

AB - Abstract In the future solar devices will be manufactured onto thin mono-crystalline silicon wafers (foils) potentially bonded to substrate carriers. In this study, the influence of the substrate carrier potential (grounded or floating) on the amorphous silicon a-Si:H surface passivation of the bonded foil is discussed for the cases of conductive and insulating substrate carriers. A conductive carrier leads to an increase in deposition rate and ion bombardment energy, which is detrimental for sample lifetime. An insulating carrier, e.g., a glass substrate, inverts the trend and improves the a-Si:H surface passivation.

KW - Amorphous silicon

KW - Heterojunctions

KW - PECVD

KW - Plasma potential

KW - Silicon solar cells

KW - Surface passivation

KW - Thin wafers

UR - https://www.scopus.com/pages/publications/84926288286

U2 - 10.1016/j.tsf.2015.02.044

DO - 10.1016/j.tsf.2015.02.044

M3 - Article

AN - SCOPUS:84926288286

SN - 0040-6090

VL - 579

SP - 9

EP - 13

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 34124

ER -

Influence of substrate potential on a-Si:H passivation of Si foils bonded to glass

Abstract

Keywords

Funding Agency

UN SDGs

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