Electrical determination of the diffusion barrier for gold in ZnTe

Fikry El Akkad

doi:10.1063/1.4838659

Electrical determination of the diffusion barrier for gold in ZnTe

Fikry El Akkad

Kuwait University

Research output: Contribution to journal › Article › peer-review

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Abstract

We report on the effect of Au diffusion on the electrical properties of ZnTe films deposited on Au coated substrates using rf magnetron sputtering. A drop over about 8 decades in the room temperature conductivity is observed for a change in substrate temperature from 60 °C to 325 °C. The results are interpreted in terms of a point-defect model that takes into account the interaction between the in-diffused Au and the intrinsic defects. The analysis of the results on the basis of this model yields a diffusion barrier of 0.40 eV for gold in ZnTe.

Original language	English
Article number	232101
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4838659
State	Published - 2 Dec 2013

Funding Agency

Kuwait Foundation for the Advancement of Sciences

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10.1063/1.4838659

Cite this

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title = "Electrical determination of the diffusion barrier for gold in ZnTe",

abstract = "We report on the effect of Au diffusion on the electrical properties of ZnTe films deposited on Au coated substrates using rf magnetron sputtering. A drop over about 8 decades in the room temperature conductivity is observed for a change in substrate temperature from 60 °C to 325 °C. The results are interpreted in terms of a point-defect model that takes into account the interaction between the in-diffused Au and the intrinsic defects. The analysis of the results on the basis of this model yields a diffusion barrier of 0.40 eV for gold in ZnTe.",

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N2 - We report on the effect of Au diffusion on the electrical properties of ZnTe films deposited on Au coated substrates using rf magnetron sputtering. A drop over about 8 decades in the room temperature conductivity is observed for a change in substrate temperature from 60 °C to 325 °C. The results are interpreted in terms of a point-defect model that takes into account the interaction between the in-diffused Au and the intrinsic defects. The analysis of the results on the basis of this model yields a diffusion barrier of 0.40 eV for gold in ZnTe.

AB - We report on the effect of Au diffusion on the electrical properties of ZnTe films deposited on Au coated substrates using rf magnetron sputtering. A drop over about 8 decades in the room temperature conductivity is observed for a change in substrate temperature from 60 °C to 325 °C. The results are interpreted in terms of a point-defect model that takes into account the interaction between the in-diffused Au and the intrinsic defects. The analysis of the results on the basis of this model yields a diffusion barrier of 0.40 eV for gold in ZnTe.

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DO - 10.1063/1.4838659

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JF - Applied Physics Letters

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Electrical determination of the diffusion barrier for gold in ZnTe

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